3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10‚ĀĻ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/LeeCHCLLTLL23
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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10‚ĀĻ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.
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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10‚ĀĻ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.
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