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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/LeeCHCLLTLL23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._W._Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/F.-S._Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J.-H._Tsai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J.-Y._Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kuo-Yu_Hsiang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Min-Hung_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/P.-H._Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Z.-F._Luo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Z.-X._Li>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185163>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163>
dc:identifier DBLP conf/vlsit/LeeCHCLLTLL23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185163 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10‚ĀĻ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._W._Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/F.-S._Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J.-H._Tsai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J.-Y._Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kuo-Yu_Hsiang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Min-Hung_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P.-H._Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Z.-F._Luo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Z.-X._Li>
swrc:pages 1-2 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#LeeCHCLLTLL23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10‚ĀĻ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document