[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/LeeKLBHLMH22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Donghwa_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hyunsang_Hwang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jangseop_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Oleksandr_Mosendz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sanghyun_Ban>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sangmin_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seonghun_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seongjae_Heo>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830179>
foaf:homepage <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830179>
dc:identifier DBLP conf/vlsit/LeeKLBHLMH22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830179 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Donghwa_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hyunsang_Hwang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jangseop_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Oleksandr_Mosendz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sanghyun_Ban>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sangmin_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seonghun_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seongjae_Heo>
swrc:pages 320-321 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2022>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/LeeKLBHLMH22/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/LeeKLBHLMH22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2022.html#LeeKLBHLMH22>
rdfs:seeAlso <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830179>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document