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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/LiangZLLLHPCKLH23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chi-Chung_Kei>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chun-Chieh_Lu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chun-Hsiung_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dong-Ru_Hsieh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Edward_Yi_Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huai-Ying_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/June-Yang_Zheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Li-Chi_Peng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tien-Sheng_Chao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tsung-Te_Chou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei-Li_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yan-Kui_Liang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu-Cheng_Lu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu-Lon_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuan-Chieh_Tseng>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185343>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185343>
dc:identifier DBLP conf/vlsit/LiangZLLLHPCKLH23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185343 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 őľS/őľm at VDS = 2V). (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chi-Chung_Kei>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chun-Chieh_Lu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chun-Hsiung_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dong-Ru_Hsieh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Edward_Yi_Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huai-Ying_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/June-Yang_Zheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Li-Chi_Peng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tien-Sheng_Chao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tsung-Te_Chou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei-Li_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yan-Kui_Liang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu-Cheng_Lu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu-Lon_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuan-Chieh_Tseng>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/LiangZLLLHPCKLH23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/LiangZLLLHPCKLH23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#LiangZLLLHPCKLH23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185343>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 őľS/őľm at VDS = 2V). (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document