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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/LinSY22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mengwei_Si>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Peide_D._Ye>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zehao_Lin>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830156>
foaf:homepage <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830156>
dc:identifier DBLP conf/vlsit/LinSY22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830156 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 109 Cycles without VT Drift Penalty. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mengwei_Si>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Peide_D._Ye>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zehao_Lin>
swrc:pages 1-2 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2022.html#LinSY22>
rdfs:seeAlso <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830156>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 109 Cycles without VT Drift Penalty. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document