Extremely High-őļ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200őľA/őľm and Record Ion per Stack of 360őľA at VOV=VDS=0.5V.
Extremely High-őļ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200őľA/őľm and Record Ion per Stack of 360őľA at VOV=VDS=0.5V.
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Extremely High-őļ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200őľA/őľm and Record Ion per Stack of 360őľA at VOV=VDS=0.5V.
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