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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/MertensHCZWMDRT23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Mingardi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Peter>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Sepulveda_Marquez>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._Cavalcante>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/D._Batuk>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/K._Paulussen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kevin_Vandersmissen>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Roger_Loo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Biesemans>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Choudhury>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Demuynck>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Samavedam>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Subramanian>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._Oniki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Z._Tao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185218>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185218>
dc:identifier DBLP conf/vlsit/MertensHCZWMDRT23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185218 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning. (xsd:string)
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Peter>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Sepulveda_Marquez>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/An_De_Keersgieter>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Andriy_Hikavyy>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/B._T._Chan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._Cavalcante>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/D._Batuk>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/D._Radisic>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/D._Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/E._Dentoni_Litta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/E._Dupuy>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/F._Sebaai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/F._Seidel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G._Mannaert>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G._T._Martinez>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J%E2%88%9A%C4%BErgen_B%E2%88%9A%E2%88%82mmels>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/K._Paulussen>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/L._Petersen_Barbosa_Lima>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/N._Horiguchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Favia>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Puttarame_Gowda>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Wong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R._Rosseel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Roger_Loo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Biesemans>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Choudhury>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Demuynck>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Samavedam>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Subramanian>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._Oniki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Z._Tao>
swrc:pages 1-2 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#MertensHCZWMDRT23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185218>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document