Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/MertensHCZWMDRT23
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/MertensHCZWMDRT23
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/A._Mingardi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/A._Peter
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/A._Sepulveda_Marquez
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/An_De_Keersgieter
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Andriy_Hikavyy
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/B._T._Chan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/C._Cavalcante
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/D._Batuk
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/D._Radisic
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/D._Zhou
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/E._Dentoni_Litta
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/E._Dupuy
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/F._Sebaai
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/F._Seidel
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/G._Mannaert
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/G._T._Martinez
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Hans_Mertens
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/J%E2%88%9A%C2%A9r%E2%88%9A%C4%ABme_Mitard
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/J%E2%88%9A%C4%BErgen_B%E2%88%9A%E2%88%82mmels
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/J._Geypen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/J._P._Soulie
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/K._Paulussen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kevin_Vandersmissen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/L._Petersen_Barbosa_Lima
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/M._Hosseini
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/N._Horiguchi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/P._Favia
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/P._Puttarame_Gowda
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/P._Wong
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/R._Rosseel
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Roger_Loo
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Biesemans
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Choudhury
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Demuynck
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Samavedam
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Subramanian
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Y._Oniki
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Z._Tao
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185218
>
foaf:
homepage
<
https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185218
>
dc:
identifier
DBLP conf/vlsit/MertensHCZWMDRT23
(xsd:string)
dc:
identifier
DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185218
(xsd:string)
dcterms:
issued
2023
(xsd:gYear)
rdfs:
label
Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/A._Mingardi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/A._Peter
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/A._Sepulveda_Marquez
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/An_De_Keersgieter
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Andriy_Hikavyy
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/B._T._Chan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/C._Cavalcante
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/D._Batuk
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/D._Radisic
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/D._Zhou
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/E._Dentoni_Litta
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/E._Dupuy
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/F._Sebaai
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/F._Seidel
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/G._Mannaert
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/G._T._Martinez
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Hans_Mertens
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/J%E2%88%9A%C2%A9r%E2%88%9A%C4%ABme_Mitard
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/J%E2%88%9A%C4%BErgen_B%E2%88%9A%E2%88%82mmels
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/J._Geypen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/J._P._Soulie
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/K._Paulussen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kevin_Vandersmissen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/L._Petersen_Barbosa_Lima
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/M._Hosseini
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/N._Horiguchi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/P._Favia
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/P._Puttarame_Gowda
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/P._Wong
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/R._Rosseel
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Roger_Loo
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Biesemans
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Choudhury
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Demuynck
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Samavedam
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Subramanian
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Thomas_Chiarella
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Y._Oniki
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Z._Tao
>
swrc:
pages
1-2
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/vlsit/MertensHCZWMDRT23/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/vlsit/MertensHCZWMDRT23
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#MertensHCZWMDRT23
>
rdfs:
seeAlso
<
https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185218
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/vlsit
>
dc:
title
Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document