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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/WeiKWHJZH22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/D._Jung>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/L._Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/W._Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._Huai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Z._Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Z._Wei>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830351>
foaf:homepage <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830351>
dc:identifier DBLP conf/vlsit/WeiKWHJZH22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830351 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Accurate and Fast STT-MRAM Endurance Evaluation Using a Novel Metric for Asymmetric Bipolar Stress and Deep Learning. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/D._Jung>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/L._Hu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/W._Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._Huai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Z._Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Z._Wei>
swrc:pages 373-374 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2022>
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2022.html#WeiKWHJZH22>
rdfs:seeAlso <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830351>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Accurate and Fast STT-MRAM Endurance Evaluation Using a Novel Metric for Asymmetric Bipolar Stress and Deep Learning. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document