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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/XieNJHK22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Can_Ni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fatih_Hamzaoglu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jaydeep_P._Kulkarni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pulkit_Jain>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shanshan_Xie>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830338>
foaf:homepage <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830338>
dc:identifier DBLP conf/vlsit/XieNJHK22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FVLSITechnologyandCir46769.2022.9830338 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Can_Ni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fatih_Hamzaoglu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jaydeep_P._Kulkarni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pulkit_Jain>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shanshan_Xie>
swrc:pages 112-113 (xsd:string)
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owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/XieNJHK22/dblp>
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2022.html#XieNJHK22>
rdfs:seeAlso <https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830338>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document