Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Cheng-Yin_Wang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Szuya_Sandy_Liao>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Tsung-Yung_Jonathan_Chang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Wei-Xiang_You>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Yih_Wang>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185283>
foaf:homepage	<https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185283>
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dcterms:issued	2023 (xsd:gYear)
rdfs:label	Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Cheng-Yin_Wang>
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foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Tsung-Yung_Jonathan_Chang>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Wei-Xiang_You>
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dc:title	Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs. (xsd:string)
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