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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/ZhangZLXDYZWY23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bo_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haiyan_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hongyi_Dou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jie_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ke_Xu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Peide_D._Ye>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xinghang_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zehao_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhuocheng_Zhang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185312>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185312>
dc:identifier DBLP conf/vlsit/ZhangZLXDYZWY23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185312 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haiyan_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hongyi_Dou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jie_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ke_Xu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Peide_D._Ye>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xinghang_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zehao_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhuocheng_Zhang>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/ZhangZLXDYZWY23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/ZhangZLXDYZWY23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#ZhangZLXDYZWY23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185312>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document