Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 őľC/cm¬≤ and Endurance > 1E11.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/ZhaoCCHWLXCL23
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/ZhaoCCHWLXCL23
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chee_Wee_Liu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Guan-Hua_Chen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jer-Fu_Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jia-Yang_Lee
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Wan-Hsuan_Hsieh
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yifan_Xing
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yu-Rui_Chen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yun-Wen_Chen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Zefu_Zhao
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185233
>
foaf:
homepage
<
https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185233
>
dc:
identifier
DBLP conf/vlsit/ZhaoCCHWLXCL23
(xsd:string)
dc:
identifier
DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185233
(xsd:string)
dcterms:
issued
2023
(xsd:gYear)
rdfs:
label
Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 őľC/cm¬≤ and Endurance > 1E11.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chee_Wee_Liu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Guan-Hua_Chen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jer-Fu_Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jia-Yang_Lee
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Wan-Hsuan_Hsieh
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yifan_Xing
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yu-Rui_Chen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yun-Wen_Chen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Zefu_Zhao
>
swrc:
pages
1-2
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/vlsit/ZhaoCCHWLXCL23/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/vlsit/ZhaoCCHWLXCL23
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#ZhaoCCHWLXCL23
>
rdfs:
seeAlso
<
https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185233
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/vlsit
>
dc:
title
Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 őľC/cm¬≤ and Endurance > 1E11.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document