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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/ZhengWXKMLCSZLG23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gengchiau_Liang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gerui_Zheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haiwen_Xu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lutz_Muehlenbein>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rami_Khazaka>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rui_Shao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sheng_Luo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiao_Gong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xuanqi_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuxuan_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zijie_Zheng>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185320>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185320>
dc:identifier DBLP conf/vlsit/ZhengWXKMLCSZLG23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185320 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5√ó10-10 ő©-cm2 ŌĀc from Cryogenic (5 K) to Room Temperature. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gengchiau_Liang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gerui_Zheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haiwen_Xu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lutz_Muehlenbein>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rami_Khazaka>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rui_Shao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sheng_Luo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiao_Gong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xuanqi_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuxuan_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zijie_Zheng>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/vlsit/ZhengWXKMLCSZLG23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/vlsit/ZhengWXKMLCSZLG23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#ZhengWXKMLCSZLG23>
rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185320>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5√ó10-10 ő©-cm2 ŌĀc from Cryogenic (5 K) to Room Temperature. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document