Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5√ó10-10 ő©-cm2 ŌĀc from Cryogenic (5 K) to Room Temperature.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/vlsit/ZhengWXKMLCSZLG23
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Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5√ó10-10 ő©-cm2 ŌĀc from Cryogenic (5 K) to Room Temperature.
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