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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/vlsit/ZhouJZWZNG23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dong_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kai_Ni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Leming_Jiao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiao_Gong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaolin_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zijie_Zheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zuopu_Zhou>
foaf:homepage <http://dx.doi.org/doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185236>
foaf:homepage <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185236>
dc:identifier DBLP conf/vlsit/ZhouJZWZNG23 (xsd:string)
dc:identifier DOI doi.org%2F10.23919%2FVLSITechnologyandCir57934.2023.10185236 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dong_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kai_Ni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Leming_Jiao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiao_Gong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaolin_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zijie_Zheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zuopu_Zhou>
swrc:pages 1-2 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185236>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/vlsit>
dc:title First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document