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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/CaiWLZLWMZ20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cezhou_Zhao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huiqing_Wen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ivona_Z._Mitrovic>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wen_Liu_0010>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yang_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ye_Liang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuanlei_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yutao_Cai>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2020.2995906>
foaf:homepage <https://doi.org/10.1109/ACCESS.2020.2995906>
dc:identifier DBLP journals/access/CaiWLZLWMZ20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2020.2995906 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cezhou_Zhao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huiqing_Wen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ivona_Z._Mitrovic>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wen_Liu_0010>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yang_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ye_Liang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuanlei_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yutao_Cai>
swrc:pages 95642-95649 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/CaiWLZLWMZ20/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/CaiWLZLWMZ20>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access8.html#CaiWLZLWMZ20>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2020.2995906>
dc:title Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 8 (xsd:string)