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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/ChengLCWHY20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bo_Yi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haimeng_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jingjie_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junji_Cheng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shiying_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Weizhen_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2020.2980042>
foaf:homepage <https://doi.org/10.1109/ACCESS.2020.2980042>
dc:identifier DBLP journals/access/ChengLCWHY20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2020.2980042 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo_Yi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haimeng_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jingjie_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junji_Cheng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shiying_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Weizhen_Chen>
swrc:pages 48991-48999 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/ChengLCWHY20/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/ChengLCWHY20>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access8.html#ChengLCWHY20>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2020.2980042>
dc:title Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 8 (xsd:string)