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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/HanZLCE23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Christian_C._Enz>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Edoardo_Charbon>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hung-Chi_Han>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Steffen_Lehmann>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhixing_Zhao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2023.3283298>
foaf:homepage <https://doi.org/10.1109/ACCESS.2023.3283298>
dc:identifier DBLP journals/access/HanZLCE23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2023.3283298 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Christian_C._Enz>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Edoardo_Charbon>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hung-Chi_Han>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Steffen_Lehmann>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhixing_Zhao>
swrc:pages 56951-56957 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/HanZLCE23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/HanZLCE23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access11.html#HanZLCE23>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2023.3283298>
dc:title Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 11 (xsd:string)