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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/HosenISP21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Catherine_Stampfl>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jeongwon_Park>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kamal_Hosen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Md._Sherajul_Islam>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2021.3105341>
foaf:homepage <https://doi.org/10.1109/ACCESS.2021.3105341>
dc:identifier DBLP journals/access/HosenISP21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2021.3105341 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Catherine_Stampfl>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jeongwon_Park>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kamal_Hosen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Md._Sherajul_Islam>
swrc:pages 116254-116264 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/HosenISP21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/HosenISP21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access9.html#HosenISP21>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2021.3105341>
dc:title Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 9 (xsd:string)