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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/JuA20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Diing_Shenp_Ang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xin_Ju>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2020.2966577>
foaf:homepage <https://doi.org/10.1109/ACCESS.2020.2966577>
dc:identifier DBLP journals/access/JuA20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2020.2966577 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label Alteration of Gate-Oxide Trap Capture/Emission Time Constants by Channel Hot-Carrier Effect in the Metal-Oxide-Semiconductor Field-Effect Transistor. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Diing_Shenp_Ang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xin_Ju>
swrc:pages 14048-14053 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/JuA20/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/JuA20>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access8.html#JuA20>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2020.2966577>
dc:title Alteration of Gate-Oxide Trap Capture/Emission Time Constants by Channel Hot-Carrier Effect in the Metal-Oxide-Semiconductor Field-Effect Transistor. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 8 (xsd:string)