[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/JungLKK21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Doowon_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hee-Dong_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jinsu_Jung>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sungho_Kim>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2021.3118386>
foaf:homepage <https://doi.org/10.1109/ACCESS.2021.3118386>
dc:identifier DBLP journals/access/JungLKK21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2021.3118386 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Doowon_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hee-Dong_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jinsu_Jung>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sungho_Kim>
swrc:pages 144264-144269 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/JungLKK21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/JungLKK21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access9.html#JungLKK21>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2021.3118386>
dc:title Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 9 (xsd:string)