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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/SameshimaNSH20>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Erika_Sekiguchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masahiko_Hasumi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tomokazu_Nagao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toshiyuki_Sameshima>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2020.2987825>
foaf:homepage <https://doi.org/10.1109/ACCESS.2020.2987825>
dc:identifier DBLP journals/access/SameshimaNSH20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2020.2987825 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Erika_Sekiguchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masahiko_Hasumi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tomokazu_Nagao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toshiyuki_Sameshima>
swrc:pages 72598-72606 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/SameshimaNSH20/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/SameshimaNSH20>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access8.html#SameshimaNSH20>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2020.2987825>
dc:title Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 8 (xsd:string)