Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/access/WangLZCL24
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Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs.
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Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs.
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