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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/DaSXZZZ09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chen_Xu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/DeShu_Zou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Guangdi_Shen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jia_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/XiaoLi_Da>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/YanXu_Zhu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs11432-009-0048-2>
foaf:homepage <https://doi.org/10.1007/s11432-009-0048-2>
dc:identifier DBLP journals/chinaf/DaSXZZZ09 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs11432-009-0048-2 (xsd:string)
dcterms:issued 2009 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/chinaf>
rdfs:label Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chen_Xu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/DeShu_Zou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Guangdi_Shen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jia_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/XiaoLi_Da>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/YanXu_Zhu>
swrc:number 8 (xsd:string)
swrc:pages 1476-1482 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/chinaf/DaSXZZZ09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/chinaf/DaSXZZZ09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/chinaf/chinaf52.html#DaSXZZZ09>
rdfs:seeAlso <https://doi.org/10.1007/s11432-009-0048-2>
dc:subject GaN; light emitting diodes; SiO2/SiN x dielectric film reflectors; plasma enhanced chemical vapor deposition (xsd:string)
dc:title Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 52 (xsd:string)