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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/FanLHWZZLZ23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jincheng_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ren_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shenglei_Zhao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Weihang_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xi_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu_Wen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yutong_Fan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhihong_Liu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs11432-022-3707-2>
foaf:homepage <https://doi.org/10.1007/s11432-022-3707-2>
dc:identifier DBLP journals/chinaf/FanLHWZZLZ23 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs11432-022-3707-2 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/chinaf>
rdfs:label High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jincheng_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ren_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shenglei_Zhao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Weihang_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xi_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu_Wen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yutong_Fan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhihong_Liu>
swrc:month December (xsd:string)
swrc:number 12 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/chinaf/FanLHWZZLZ23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/chinaf/FanLHWZZLZ23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/chinaf/chinaf66.html#FanLHWZZLZ23>
rdfs:seeAlso <https://doi.org/10.1007/s11432-022-3707-2>
dc:title High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 66 (xsd:string)