Novel vertical channel double gate structures for high density and low power flash memory applications.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/chinaf/HuangZCWZ08
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bibliographicCitation
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dcterms:
issued
2008
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swrc:
journal
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https://dblp.l3s.de/d2r/resource/journals/chinaf
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Novel vertical channel double gate structures for high density and low power flash memory applications.
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6
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799-806
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dc:
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double gate devices; flash memory; high density; low power
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title
Novel vertical channel double gate structures for high density and low power flash memory applications.
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