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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/HuangZCWZ08>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/DaKe_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/FaLong_Zhou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ru_Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xing_Zhang_0002>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yimao_Cai>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs11432-008-0075-4>
foaf:homepage <https://doi.org/10.1007/s11432-008-0075-4>
dc:identifier DBLP journals/chinaf/HuangZCWZ08 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs11432-008-0075-4 (xsd:string)
dcterms:issued 2008 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/chinaf>
rdfs:label Novel vertical channel double gate structures for high density and low power flash memory applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/DaKe_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/FaLong_Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ru_Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xing_Zhang_0002>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yimao_Cai>
swrc:number 6 (xsd:string)
swrc:pages 799-806 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/chinaf/HuangZCWZ08/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/chinaf/HuangZCWZ08>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/chinaf/chinaf51.html#HuangZCWZ08>
rdfs:seeAlso <https://doi.org/10.1007/s11432-008-0075-4>
dc:subject double gate devices; flash memory; high density; low power (xsd:string)
dc:title Novel vertical channel double gate structures for high density and low power flash memory applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 51 (xsd:string)