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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/LiuHZLH21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Genquan_Han>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huan_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiuren_Zhou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yan_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yue_Hao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs11432-019-2846-9>
foaf:homepage <https://doi.org/10.1007/s11432-019-2846-9>
dc:identifier DBLP journals/chinaf/LiuHZLH21 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs11432-019-2846-9 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/chinaf>
rdfs:label High mobility germanium-on-insulator p-channel FinFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Genquan_Han>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huan_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiuren_Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yan_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yue_Hao>
swrc:number 4 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/chinaf/LiuHZLH21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/chinaf/LiuHZLH21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/chinaf/chinaf64.html#LiuHZLH21>
rdfs:seeAlso <https://doi.org/10.1007/s11432-019-2846-9>
dc:title High mobility germanium-on-insulator p-channel FinFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 64 (xsd:string)