High mobility germanium-on-insulator p-channel FinFETs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/chinaf/LiuHZLH21
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/LiuHZLH21
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Genquan_Han
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Huan_Liu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jiuren_Zhou
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yan_Liu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yue_Hao
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1007%2Fs11432-019-2846-9
>
foaf:
homepage
<
https://doi.org/10.1007/s11432-019-2846-9
>
dc:
identifier
DBLP journals/chinaf/LiuHZLH21
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1007%2Fs11432-019-2846-9
(xsd:string)
dcterms:
issued
2021
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/chinaf
>
rdfs:
label
High mobility germanium-on-insulator p-channel FinFETs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Genquan_Han
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Huan_Liu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jiuren_Zhou
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yan_Liu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yue_Hao
>
swrc:
number
4
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/chinaf/LiuHZLH21/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/chinaf/LiuHZLH21
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/chinaf/chinaf64.html#LiuHZLH21
>
rdfs:
seeAlso
<
https://doi.org/10.1007/s11432-019-2846-9
>
dc:
title
High mobility germanium-on-insulator p-channel FinFETs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
64
(xsd:string)