Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/chinaf/TianBXXYMYXW20
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/TianBXXYMYXW20
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Gaobo_Xu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Guoliang_Tian
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Huaxiang_Yin
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jinshun_Bi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kai_Xi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Qiuxia_Xu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sandip_Majumdar
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Wenwu_Wang_0006
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xueqin_Yang
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1007%2Fs11432-019-2716-5
>
foaf:
homepage
<
https://doi.org/10.1007/s11432-019-2716-5
>
dc:
identifier
DBLP journals/chinaf/TianBXXYMYXW20
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1007%2Fs11432-019-2716-5
(xsd:string)
dcterms:
issued
2020
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/chinaf
>
rdfs:
label
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Gaobo_Xu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Guoliang_Tian
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Huaxiang_Yin
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jinshun_Bi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kai_Xi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Qiuxia_Xu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sandip_Majumdar
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Wenwu_Wang_0006
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xueqin_Yang
>
swrc:
number
12
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/chinaf/TianBXXYMYXW20/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/chinaf/TianBXXYMYXW20
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/chinaf/chinaf63.html#TianBXXYMYXW20
>
rdfs:
seeAlso
<
https://doi.org/10.1007/s11432-019-2716-5
>
dc:
title
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
63
(xsd:string)