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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/WangFCTM23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hao_Tong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jingwei_Cai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiangshui_Miao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaojie_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zeyang_Feng>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs11432-022-3617-2>
foaf:homepage <https://doi.org/10.1007/s11432-022-3617-2>
dc:identifier DBLP journals/chinaf/WangFCTM23 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs11432-022-3617-2 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/chinaf>
rdfs:label All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hao_Tong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jingwei_Cai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiangshui_Miao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaojie_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zeyang_Feng>
swrc:month August (xsd:string)
swrc:number 8 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/chinaf/WangFCTM23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/chinaf/WangFCTM23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/chinaf/chinaf66.html#WangFCTM23>
rdfs:seeAlso <https://doi.org/10.1007/s11432-022-3617-2>
dc:title All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 66 (xsd:string)