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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/YanCLYL23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jinshan_Yue>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nianduan_Lu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qing_Luo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shengzhe_Yan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhaori_Cong>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs11432-023-3802-8>
foaf:homepage <https://doi.org/10.1007/s11432-023-3802-8>
dc:identifier DBLP journals/chinaf/YanCLYL23 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs11432-023-3802-8 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/chinaf>
rdfs:label Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jinshan_Yue>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nianduan_Lu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qing_Luo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shengzhe_Yan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhaori_Cong>
swrc:month October (xsd:string)
swrc:number 10 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/chinaf/YanCLYL23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/chinaf/YanCLYL23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/chinaf/chinaf66.html#YanCLYL23>
rdfs:seeAlso <https://doi.org/10.1007/s11432-023-3802-8>
dc:title Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 66 (xsd:string)