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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/chinaf/ZhangSHYLXWZYFKS23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haiding_Sun>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haochen_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hu_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huabin_Yu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kun_Liang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kunpeng_Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lei_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mingshuo_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shi_Fang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yang_Kang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yue_Sun>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhanyong_Xing>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs11432-022-3694-4>
foaf:homepage <https://doi.org/10.1007/s11432-022-3694-4>
dc:identifier DBLP journals/chinaf/ZhangSHYLXWZYFKS23 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs11432-022-3694-4 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/chinaf>
rdfs:label Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haiding_Sun>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haochen_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hu_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huabin_Yu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kun_Liang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kunpeng_Hu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lei_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mingshuo_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shi_Fang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yang_Kang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yue_Sun>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhanyong_Xing>
swrc:month August (xsd:string)
swrc:number 8 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/chinaf/ZhangSHYLXWZYFKS23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/chinaf/ZhangSHYLXWZYFKS23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/chinaf/chinaf66.html#ZhangSHYLXWZYFKS23>
rdfs:seeAlso <https://doi.org/10.1007/s11432-022-3694-4>
dc:title Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 66 (xsd:string)