Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique.
Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique.
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Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique.
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