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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/displays/LeeYLLY14>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cheng-I_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Horng-Chih_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tung-Wei_Yen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yih-Shing_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yun_Yeh>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.displa.2014.05.005>
foaf:homepage <https://doi.org/10.1016/j.displa.2014.05.005>
dc:identifier DBLP journals/displays/LeeYLLY14 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.displa.2014.05.005 (xsd:string)
dcterms:issued 2014 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/displays>
rdfs:label Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cheng-I_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Horng-Chih_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tung-Wei_Yen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yih-Shing_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yun_Yeh>
swrc:number 3 (xsd:string)
swrc:pages 165-170 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/displays/LeeYLLY14/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/displays/LeeYLLY14>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/displays/displays35.html#LeeYLLY14>
rdfs:seeAlso <https://doi.org/10.1016/j.displa.2014.05.005>
dc:title Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 35 (xsd:string)