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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/dt/HashempourL08>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hamidreza_Hashempour>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FMDT.2008.34>
foaf:homepage <https://doi.org/10.1109/MDT.2008.34>
dc:identifier DBLP journals/dt/HashempourL08 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FMDT.2008.34 (xsd:string)
dcterms:issued 2008 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/dt>
rdfs:label Device Model for Ballistic CNFETs Using the First Conducting Band. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hamidreza_Hashempour>
swrc:number 2 (xsd:string)
swrc:pages 178-186 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/dt/HashempourL08/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/dt/HashempourL08>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/dt/dt25.html#HashempourL08>
rdfs:seeAlso <https://doi.org/10.1109/MDT.2008.34>
dc:subject carbon nanotube, CNFET, charge density, self-consistent voltage, drain-source current, approximation, closed-form, CAD (xsd:string)
dc:title Device Model for Ballistic CNFETs Using the First Conducting Band. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 25 (xsd:string)