Device Model for Ballistic CNFETs Using the First Conducting Band.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/dt/HashempourL08
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2008
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Device Model for Ballistic CNFETs Using the First Conducting Band.
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178-186
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dc:
subject
carbon nanotube, CNFET, charge density, self-consistent voltage, drain-source current, approximation, closed-form, CAD
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Device Model for Ballistic CNFETs Using the First Conducting Band.
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