Aspect ratio of radiation-hardened MOS transistors - Modelling of the equivalent channel dimensions of integrated MOS transistors in radiation-hardened enclosed layout. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Alicja_Malgorzata_Michalowska-Forsyth>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Varvara_Bezhenova>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1007%2Fs00502-017-0575-2>
foaf:homepage	<https://doi.org/10.1007/s00502-017-0575-2>
dc:identifier	DBLP journals/ei/BezhenovaM18 (xsd:string)
dc:identifier	DOI doi.org%2F10.1007%2Fs00502-017-0575-2 (xsd:string)
dcterms:issued	2018 (xsd:gYear)
swrc:journal	<https://dblp.l3s.de/d2r/resource/journals/ei>
rdfs:label	Aspect ratio of radiation-hardened MOS transistors - Modelling of the equivalent channel dimensions of integrated MOS transistors in radiation-hardened enclosed layout. (xsd:string)
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swrc:pages	61-68 (xsd:string)
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rdfs:seeAlso	<http://dblp.uni-trier.de/db/journals/ei/ei135.html#BezhenovaM18>
rdfs:seeAlso	<https://doi.org/10.1007/s00502-017-0575-2>
dc:title	Aspect ratio of radiation-hardened MOS transistors - Modelling of the equivalent channel dimensions of integrated MOS transistors in radiation-hardened enclosed layout. (xsd:string)
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