[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/elektrik/RajaeiATF17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bahar_Asgari>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mahdi_Fazeli>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mahmoud_Tabandeh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ramin_Rajaei>
foaf:homepage <http://dx.doi.org/doi.org%2F10.3906%2Felk-1502-124>
foaf:homepage <https://doi.org/10.3906/elk-1502-124>
dc:identifier DBLP journals/elektrik/RajaeiATF17 (xsd:string)
dc:identifier DOI doi.org%2F10.3906%2Felk-1502-124 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/elektrik>
rdfs:label Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bahar_Asgari>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mahdi_Fazeli>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mahmoud_Tabandeh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ramin_Rajaei>
swrc:pages 1035-1047 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/elektrik/RajaeiATF17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/elektrik/RajaeiATF17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/elektrik/elektrik25.html#RajaeiATF17>
rdfs:seeAlso <https://doi.org/10.3906/elk-1502-124>
dc:title Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 25 (xsd:string)