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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/et/BhattacharjeeND22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Abhishek_Bhattacharjee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Abhishek_Nag>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kaushik_Das>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sambhu_Nath_Pradhan>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs10836-022-05990-4>
foaf:homepage <https://doi.org/10.1007/s10836-022-05990-4>
dc:identifier DBLP journals/et/BhattacharjeeND22 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs10836-022-05990-4 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/et>
rdfs:label Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage Power Dissipation During the Hold Operation. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Abhishek_Bhattacharjee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Abhishek_Nag>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kaushik_Das>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sambhu_Nath_Pradhan>
swrc:number 1 (xsd:string)
swrc:pages 91-105 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/et/BhattacharjeeND22/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/et/BhattacharjeeND22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/et/et38.html#BhattacharjeeND22>
rdfs:seeAlso <https://doi.org/10.1007/s10836-022-05990-4>
dc:title Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage Power Dissipation During the Hold Operation. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 38 (xsd:string)