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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/et/ChakrabortyM94>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kanad_Chakraborty>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pinaki_Mazumder>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2FBF00972519>
foaf:homepage <https://doi.org/10.1007/BF00972519>
dc:identifier DBLP journals/et/ChakrabortyM94 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2FBF00972519 (xsd:string)
dcterms:issued 1994 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/et>
rdfs:label Technology and layout-related testing of static random-access memories. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kanad_Chakraborty>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pinaki_Mazumder>
swrc:number 4 (xsd:string)
swrc:pages 347-365 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/et/ChakrabortyM94/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/et/ChakrabortyM94>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/et/et5.html#ChakrabortyM94>
rdfs:seeAlso <https://doi.org/10.1007/BF00972519>
dc:subject Array layout; cell technology; Gallium Arsenide (GaAs); high electron mobility transistor (HEMT) RAMs; I DD testing; I DDQ testing (xsd:string)
dc:title Technology and layout-related testing of static random-access memories. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 5 (xsd:string)