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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/et/GhaidaZ09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Payman_Zarkesh-Ha>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rani_S._Ghaida>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs10836-008-5079-x>
foaf:homepage <https://doi.org/10.1007/s10836-008-5079-x>
dc:identifier DBLP journals/et/GhaidaZ09 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs10836-008-5079-x (xsd:string)
dcterms:issued 2009 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/et>
rdfs:label A Layout Sensitivity Model for Estimating Electromigration-vulnerable Narrow Interconnects. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Payman_Zarkesh-Ha>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rani_S._Ghaida>
swrc:number 1 (xsd:string)
swrc:pages 67-77 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/et/GhaidaZ09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/et/GhaidaZ09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/et/et25.html#GhaidaZ09>
rdfs:seeAlso <https://doi.org/10.1007/s10836-008-5079-x>
dc:subject Yield modeling; Yield prediction; Electromigration; Layout sensitivity; Critical area; Spot defects; Narrow defects (xsd:string)
dc:title A Layout Sensitivity Model for Estimating Electromigration-vulnerable Narrow Interconnects. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 25 (xsd:string)