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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/et/LiLM0LWWNC16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haibin_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Li_Chen_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lixiang_Li_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michael_Newton>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mo_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qiong_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rui_Liu_0011>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuan_Ma>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuanqing_Li>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2Fs10836-016-5573-5>
foaf:homepage <https://doi.org/10.1007/s10836-016-5573-5>
dc:identifier DBLP journals/et/LiLM0LWWNC16 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2Fs10836-016-5573-5 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/et>
rdfs:label A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haibin_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Li_Chen_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lixiang_Li_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michael_Newton>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mo_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qiong_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rui_Liu_0011>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuan_Ma>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuanqing_Li>
swrc:number 2 (xsd:string)
swrc:pages 137-145 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/et/LiLM0LWWNC16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/et/LiLM0LWWNC16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/et/et32.html#LiLM0LWWNC16>
rdfs:seeAlso <https://doi.org/10.1007/s10836-016-5573-5>
dc:title A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 32 (xsd:string)