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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/et/SeguraBRH96>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_Rubio_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carol_de_Benito>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Charles_F._Hawkins>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jaume_Segura_0001>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2FBF00133386>
foaf:homepage <https://doi.org/10.1007/BF00133386>
dc:identifier DBLP journals/et/SeguraBRH96 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2FBF00133386 (xsd:string)
dcterms:issued 1996 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/et>
rdfs:label A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_Rubio_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carol_de_Benito>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Charles_F._Hawkins>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jaume_Segura_0001>
swrc:number 3 (xsd:string)
swrc:pages 229-239 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/et/SeguraBRH96/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/et/SeguraBRH96>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/et/et8.html#SeguraBRH96>
rdfs:seeAlso <https://doi.org/10.1007/BF00133386>
dc:subject gate oxide short; physical defects; fault modeling (xsd:string)
dc:title A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 8 (xsd:string)