Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/ibmrd/OsburnKHDYGLLLZHKLMO02
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/ibmrd/OsburnKHDYGLLLZHKLMO02
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Carlton_M._Osburn
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chung-Ho_Lee
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Dim-Lee_Kwong
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Gerald_Lucovsky
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Indong_Kim
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Indranil_De
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/John_R._Hauser
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kam_F._Yee
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mehmet_C._%E2%88%9A%C4%96zt%E2%88%9A%C4%BErk
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Shyam_Gannavaram
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sung-Joo_Lee
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sungkee_Han
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/T._P._Ma
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Wenjuan_Zhu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Zhijiong_J._Luo
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1147%2Frd.462.0299
>
foaf:
homepage
<
https://doi.org/10.1147/rd.462.0299
>
dc:
identifier
DBLP journals/ibmrd/OsburnKHDYGLLLZHKLMO02
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1147%2Frd.462.0299
(xsd:string)
dcterms:
issued
2002
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/ibmrd
>
rdfs:
label
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Carlton_M._Osburn
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chung-Ho_Lee
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Dim-Lee_Kwong
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Gerald_Lucovsky
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Indong_Kim
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Indranil_De
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/John_R._Hauser
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kam_F._Yee
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mehmet_C._%E2%88%9A%C4%96zt%E2%88%9A%C4%BErk
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Shyam_Gannavaram
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sung-Joo_Lee
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sungkee_Han
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/T._P._Ma
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Wenjuan_Zhu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Zhijiong_J._Luo
>
swrc:
number
2-3
(xsd:string)
swrc:
pages
299-316
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/ibmrd/OsburnKHDYGLLLZHKLMO02/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/ibmrd/OsburnKHDYGLLLZHKLMO02
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/ibmrd/ibmrd46.html#OsburnKHDYGLLLZHKLMO02
>
rdfs:
seeAlso
<
https://doi.org/10.1147/rd.462.0299
>
dc:
title
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
46
(xsd:string)