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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieiceee/FunakiMKH06>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shuntaro_Matsuzaki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takashi_Hikihara>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tsunenobu_Kimoto>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tsuyoshi_Funaki>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Felex.3.379>
foaf:homepage <https://doi.org/10.1587/elex.3.379>
dc:identifier DBLP journals/ieiceee/FunakiMKH06 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Felex.3.379 (xsd:string)
dcterms:issued 2006 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieiceee>
rdfs:label Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shuntaro_Matsuzaki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takashi_Hikihara>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tsunenobu_Kimoto>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tsuyoshi_Funaki>
swrc:number 16 (xsd:string)
swrc:pages 379-384 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieiceee/FunakiMKH06/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieiceee/FunakiMKH06>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieiceee/ieiceee3.html#FunakiMKH06>
rdfs:seeAlso <https://doi.org/10.1587/elex.3.379>
dc:title Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 3 (xsd:string)