The influence of the N+ floating layer on the drift doping of RESURF LDMOS and its analytical model.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/ieiceee/HuWJH16
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The influence of the N+ floating layer on the drift doping of RESURF LDMOS and its analytical model.
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The influence of the N+ floating layer on the drift doping of RESURF LDMOS and its analytical model.
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