Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/ieiceee/IshidoMKUIU07
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Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique.
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Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique.
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