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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieiceee/SasakiHKTF12>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hajime_Sasaki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kaoru_Kadoiwa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takayuki_Hisaka>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yasufumi_Fujiwara>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yoshikazu_Terai>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Felex.9.1592>
foaf:homepage <https://doi.org/10.1587/elex.9.1592>
dc:identifier DBLP journals/ieiceee/SasakiHKTF12 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Felex.9.1592 (xsd:string)
dcterms:issued 2012 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieiceee>
rdfs:label Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hajime_Sasaki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kaoru_Kadoiwa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takayuki_Hisaka>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yasufumi_Fujiwara>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yoshikazu_Terai>
swrc:number 20 (xsd:string)
swrc:pages 1592-1597 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieiceee/SasakiHKTF12/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieiceee/SasakiHKTF12>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieiceee/ieiceee9.html#SasakiHKTF12>
rdfs:seeAlso <https://doi.org/10.1587/elex.9.1592>
dc:title Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 9 (xsd:string)