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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieiceee/YangLCWC13>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Changjiang_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jun_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tianqian_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaoming_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu_Cai>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Felex.10.20130057>
foaf:homepage <https://doi.org/10.1587/elex.10.20130057>
dc:identifier DBLP journals/ieiceee/YangLCWC13 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Felex.10.20130057 (xsd:string)
dcterms:issued 2013 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieiceee>
rdfs:label High voltage (>1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Changjiang_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jun_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tianqian_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaoming_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu_Cai>
swrc:number 4 (xsd:string)
swrc:pages 20130057 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieiceee/YangLCWC13/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieiceee/YangLCWC13>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieiceee/ieiceee10.html#YangLCWC13>
rdfs:seeAlso <https://doi.org/10.1587/elex.10.20130057>
dc:title High voltage (>1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 10 (xsd:string)