Physical mechanism study of N-well doping effects on the single-event transient characteristic of PMOS.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/ieiceee/ZhaoPLW19
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Physical mechanism study of N-well doping effects on the single-event transient characteristic of PMOS.
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Physical mechanism study of N-well doping effects on the single-event transient characteristic of PMOS.
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