Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology.
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Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology.
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Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology.
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