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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieicet/HirokiMS10>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masanobu_Hiroki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Naoteru_Shigekawa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Narihiko_Maeda>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Ftransele.E93.C.579>
foaf:homepage <https://doi.org/10.1587/transele.E93.C.579>
dc:identifier DBLP journals/ieicet/HirokiMS10 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Ftransele.E93.C.579 (xsd:string)
dcterms:issued 2010 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieicet>
rdfs:label Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masanobu_Hiroki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Naoteru_Shigekawa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Narihiko_Maeda>
swrc:number 5 (xsd:string)
swrc:pages 579-584 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieicet/HirokiMS10/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieicet/HirokiMS10>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieicet/ieicet93c.html#HirokiMS10>
rdfs:seeAlso <https://doi.org/10.1587/transele.E93.C.579>
dc:title Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 93-C (xsd:string)