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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieicet/MashimoIH18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kazuhiko_Honjo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kazuki_Mashimo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ryo_Ishikawa>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1587%2Ftransele.E101.C.751>
foaf:homepage <https://doi.org/10.1587/transele.E101.C.751>
dc:identifier DBLP journals/ieicet/MashimoIH18 (xsd:string)
dc:identifier DOI doi.org%2F10.1587%2Ftransele.E101.C.751 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieicet>
rdfs:label 4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kazuhiko_Honjo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kazuki_Mashimo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ryo_Ishikawa>
swrc:number 10 (xsd:string)
swrc:pages 751-758 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieicet/MashimoIH18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieicet/MashimoIH18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieicet/ieicet101c.html#MashimoIH18>
rdfs:seeAlso <https://doi.org/10.1587/transele.E101.C.751>
dc:title 4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 101-C (xsd:string)