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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/ieicet/OhmiKS06>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Masaki_Satoh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shun%27ichiro_Ohmi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tomoki_Kurose>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1093%2Fietele%2Fe89-c.5.596>
foaf:homepage <https://doi.org/10.1093/ietele/e89-c.5.596>
dc:identifier DBLP journals/ieicet/OhmiKS06 (xsd:string)
dc:identifier DOI doi.org%2F10.1093%2Fietele%2Fe89-c.5.596 (xsd:string)
dcterms:issued 2006 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/ieicet>
rdfs:label Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Masaki_Satoh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shun%27ichiro_Ohmi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tomoki_Kurose>
swrc:number 5 (xsd:string)
swrc:pages 596-601 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/ieicet/OhmiKS06/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/ieicet/OhmiKS06>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/ieicet/ieicet89c.html#OhmiKS06>
rdfs:seeAlso <https://doi.org/10.1093/ietele/e89-c.5.596>
dc:title Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 89-C (xsd:string)